![]() Transistor 35 is biased normally nonconducting by the connection from the collector electrode 52 to the intermediate point 51 between resistors 49 and 50. Transistor 35 is connected at the emitter electrode 54 thereof to the emitter electrode 12 of the output device 8. 1 also includes an input diode AND gate consisting of three input diodes 31, 32 and 33 which are connected to the base 53 of a transistor 35. The diode-transistor logic circuit in FIG. having at least two inputs acting on one output Inverting circuits using specified components using semiconductor devices using bipolar transistors having at least two inputs acting on one output Inverting circuits using specified components using semiconductor devices having at least two inputs acting on one output Inverting circuits using specified components ![]() having at least two inputs acting on one output Inverting circuits H01L29/0813- Non-interconnected multi-emitter structures.H01L29/0804- Emitter regions of bipolar transistors.H01L29/08- Semiconductor bodies Multistep manufacturing processes therefor characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes.H01L29/06- Semiconductor bodies Multistep manufacturing processes therefor characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions characterised by the concentration or distribution of impurities within semiconductor regions.H01L29/02- Semiconductor bodies Multistep manufacturing processes therefor.PN junction depletion layer or carrier concentration layer Details of semiconductor bodies or of electrodes thereof Multistep manufacturing processes therefor H01L29/00- Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g.H01L- SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Motorola Inc filed Critical Motorola Inc Application granted granted Critical Publication of US3446994A publication Critical patent/US3446994A/en Anticipated expiration legal-status Critical Status Expired - Lifetime legal-status Critical Current Links Original Assignee Motorola Inc Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US577870A Inventor Ronald L Treadway Current Assignee (The listed assignees may be inaccurate. Google Patents High threshold diode transistor logic circuitryÄownload PDF Info Publication number US3446994A US3446994A US577870A US3446994DA US3446994A US 3446994 A US3446994 A US 3446994A US 577870 A US577870 A US 577870A US 3446994D A US3446994D A US 3446994DA US 3446994 A US3446994 A US 3446994A Authority US United States Prior art keywords flip emitter output flop semiconductor device Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US3446994A - High threshold diode transistor logic circuitry US3446994A - High threshold diode transistor logic circuitry
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